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| IRF5N60 POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. FEATURES Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature PIN CONFIGURATION T TO-220FP SYMBOL D Front View G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Total Power Dissipation Derate above 25 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds (1) Pulse Width and frequency is limited by TJ(max) and thermal response TJ = 25 TJ, TSTG EAS Continue Non-repetitive Symbol ID IDM VGS VGSM PD Value 5.0 20 20 40 35 0.28 -55 to 150 245 1.0 62.5 260 mJ /W V V W W/ Unit A (VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25 ) JC JA TL Page 1 IRF5N60 POWER MOSFET ORDERING INFORMATION Part Number IRF5N60 Package TO-220 Full Pak ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . CIRF5N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125 ) Gate-Source Leakage Current-Forward (Vgsf = 30 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = -30 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.5A) * Forward Transconductance (VDS >ID(ON)*RDS(ON)max , ID = 2.5A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 2.5 A, VGS = 10 V, RG = 4.7 ) * (VDS = 480 V, ID = 5.0 A, VGS = 10 V)* Symbol V(BR)DSS IDSS 50 50 IGSSF IGSSR VGS(th) RDS(on) 3.0 .................. 100 ................. -100 5.0 1.8..............2.0 2.5..............4.5............... .................680.............884. 103 11 12 10 .................36 21 7.6 ...................7.5................ 4.5 7.5 139 15 17 .14. . 30 mhos pF pF pF ns ns ns ns nC nC nC nH nH nA nA V Min 600 Typ Max Units V A gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS .................25.................... Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time * Pulse Test: Pulse Width 300s, Duty Cycle ** Negligible, Dominated by circuit inductance (ISD =5.0 A,VDD=100V dIS/dt = 100A/s) VSD ton trr ** ................610 1.6 V ns ns 1.5% Page 2 IRF5N60 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Safe Operating Area for TO-220FP Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Page 3 IRF5N60 POWER MOSFET Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Page 4 IRF5N60 POWER MOSFET TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 G Page 5 |
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